 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| geometry process details process cpd17 ultra fast rectifier 3 amp glass passivated rectifier chip process glass passivated mesa die size 88 x 88 mils die thickness 14 mils anode bonding pad area 69 x 69 mils top side metalization ni/au - 5,000?/2,000? back side metalization ni/au - 5,000?/2,000? backside cathode principal device types 1n5802 thru 1n5806 ues1101 thru ues1106 cmr3u-01 series gross die per 4 inch wafer 1,200 www.centralsemi.com r4 (22-march 2010)
process cpd17 typical electrical characteristics www.centralsemi.com r4 (22-march 2010) |
Price & Availability of CPD1710
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |